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Same model may have multiple batches, images only for reference.
FESB16JT-E3/81 Vishay
Same model may have multiple batches, images only for reference.

FESB16JT-E3/81

Part No FESB16JT-E3/81
Manufacturer Vishay
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 16A TO263AB
Datasheet
FESB16JT-E3/81 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Tape & Reel
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 16A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 16 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Capacitance @ Vr, F 145pF @ 4V, 1MHz
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK)
Operating Temperature - Junction -65°C ~ 150°C
Base Product Number FESB16
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1366894-FESB16JT-E3/81
Ultra Librarian 3D Model Ultra Librarian FESB16JT-E3/81 CAD Model

Description

The FESB16JT-E3/81 is a rectifier diode from Vishay General Semiconductor - Diodes Division. Vishay General Semiconductor - Diodes Division.

  • Series: FESB16
  • Package: TO-263AB (D²PAK)
  • Maximum Reverse Voltage: 600V
  • Average Rectified Current: 16A
  • Forward Voltage: 1.5V @ 16A
  • Recovery Time: Less than 500ns (Fast)
  • Reverse Leakage Current: 10μA @ 600V
  • Capacitance: 145pF @ 4V and 1MHz
  • Operating Temperature: -65°C to 150°C
  • Mounting: Surface mountable

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