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IRFB11N50APBF

Part No IRFB11N50APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 11A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 1423pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017570-IRFB11N50APBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFB11N50A
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRFB11N50APBF CAD Model

Description

The Vishay electronic component is a MOSFET designed for N-Channel polarity.

  • Drain-Source Breakdown Voltage: 500V
  • Maximum Gate-Source Voltage: ±30V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 520 mOhm @ 6.6A, 10V
  • Mounting Technology: through hole
  • Package: TO-220AB
  • Component Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: high
  • Win Source Part Number: 017570-IRFB11N50APBF

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4552 $50.9320
85+ $1.1941 $101.4985
130+ $1.1567 $150.3710
180+ $1.1194 $201.4920
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,030 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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