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Same model may have multiple batches, images only for reference.
IRL8113SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL8113SPBF

Part No IRL8113SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 105A D2PAK
Datasheet
IRL8113SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2840pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040799-IRL8113SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL8113SPBF CAD Model

Description

The IRL8113SPBF is an N-channel MOSFET designed for high-performance applications.

  • Category: Discrete Semiconductor Products
  • Package: D2PAK
  • Voltage Rating: 30V
  • Maximum Current: 105A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Max Gate Charge: 35nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V
  • Status: obsolete (EOL)

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35+ $3.3806 $118.3210
53+ $3.2749 $173.5697
73+ $3.1693 $231.3589
95+ $3.0637 $291.0515
127+ $2.7467 $348.8309
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Availability: 10,700 pieces
MOQ: 15 pcs
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