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IRFBA22N50APBF

Part No IRFBA22N50APBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET®Power MOSFET | MOSFET N-CH 500V 24A SUPER-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 230mOhm at 13.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 115nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 3400pF at 25V
Power Dissipation (Maximum) 340W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package SUPER-220 (TO-273AA)
Manufacturer Package Super-220
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187520-IRFBA22N50APBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBA22N50APBF CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay Siliconix. Its Win Source Part Number is 1187520-IRFBA22N50APBF and it comes in a tube packaging with through hole mounting style.

  • Manufacturer: Vishay Siliconix
  • Win Source Part Number: 1187520-IRFBA22N50APBF
  • Packaging: tube
  • Mounting Style: through hole
  • Supply and Demand Status: limited
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 500V
  • Id - Continuous Drain Current: 24A
  • Rds On (Maximum) @ Id, Vgs: 230mOhm @ 13.8A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V
  • Gate Source Voltage (Maximum): ±30V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3400pF @ 25V

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