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Same model may have multiple batches, images only for reference.
IRFBF20STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBF20STRLPBF

Part No IRFBF20STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.7A D2PAK
Datasheet
IRFBF20STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 8 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017585-IRFBF20STRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBF20STRLPBF CAD Model

Description

The Vishay IRFBF20STRLPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 900V and a maximum continuous drain current of 1.7A @ 25°C.

  • Maximum Power Dissipation: 3.1W @ Ta and 54W @ Tc
  • Package: D2PAK
  • Applications: suitable for use in power supplies, motor control, and other high voltage applications

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111+ $2.6184 $290.6424
138+ $2.5137 $346.8906
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Availability: 2,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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