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IRFD010PBF

Part No IRFD010PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 1.7A 4-DIP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 860mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 109907-IRFD010PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD010PBF CAD Model

Description

The Vishay IRFD010PBF is an N-channel MOSFET with a drain-source breakdown voltage of 50V and a continuous drain current of 1.7A @ 25°C.

  • Mounting Technology: through-hole
  • Power Dissipation: 1W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 250pF @ 25V
  • Maximum Rds On @ Id, Vgs: 200 mOhm @ 860mA, 10V
  • Case/Package: 4-DIP, Hexdip, HVMDIP
  • Dimension: 4-DIP (0.300", 7.62mm)
  • Application: ideal for use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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