IRFD024 Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 2.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 640pF at 25V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187557-IRFD024
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD024 CAD Model

Description

The Vishay Siliconix IRFD024 is an N-channel MOSFET transistor that can handle a maximum continuous drain current of 2.5A and has a drain-source breakdown voltage of 60V.

  • Maximum On-Resistance: 100mOhm @ 1.5A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 25nC @ 10V
  • Package: 4-DIP, Hexdip, HVMDIP package
  • Operating Temperature: -55°C to 175°C
  • Applications: Suitable for use in applications such as power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.4721 $74.1630
65+ $2.0283 $131.8395
100+ $1.9649 $196.4900
140+ $1.9016 $266.2240
180+ $1.8383 $330.8940
240+ $1.6481 $395.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,300 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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