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IRFD210PBF

Part No IRFD210PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 600MA 4-DIP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 360mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 017591-IRFD210PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD210PBF CAD Model

Description

The Vishay IRFD210PBF is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 600mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 8.2nC @ 10V
  • Maximum Input Capacitance: 140pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 1.5 Ohm @ 360mA, 10V
  • Mounting: through-hole mounted
  • Case/Package: 4-DIP, Hexdip, HVMDIP
  • Supply and Demand Status: limited
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6656 $58.2960
75+ $1.3667 $102.5025
115+ $1.3240 $152.2600
160+ $1.2813 $205.0080
205+ $1.2385 $253.8925
275+ $1.1104 $305.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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