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SQJ180EP-T1_GE3

Part No SQJ180EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE N-CHANNEL 80 V (D-S) / N-Channel 80 V 248A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 248A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6645 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338507-SQJ180EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ180EP-T1_GE3 CAD Model

Description

The SQJ180EP-T1_GE3 from Vishay Siliconix is an electronic component that is used in various electronic applications.

  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Type: N-Channel MOSFET
  • Drain to Source Voltage (Vdss): 80 V
  • Power Dissipation (Max): 500W (Tc)
  • Mounting Type: Surface Mount
  • Package: PowerPAK SO-8
  • Win Source Part Number: 1338507-SQJ180EP-T1_GE3
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5188 $52.7820
35+ $2.8873 $101.0555
54+ $2.7970 $151.0380
74+ $2.7068 $200.3032
96+ $2.6166 $251.1936
128+ $2.3459 $300.2752
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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