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Same model may have multiple batches, images only for reference.
IRFL014TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFL014TRPBF

Part No IRFL014TRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.7A SOT223
Datasheet
IRFL014TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017613-IRFL014TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFL014
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFL014TRPBF CAD Model

Description

The Vishay IRFL014TRPBF is a N-Channel MOSFET, which is a type of transistor that is commonly used in electronic circuits to switch and amplify signals.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 2.7A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 200 mOhm @ 1.6A, 10V
  • Package: SOT-223
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4219 $50.6280
255+ $0.3952 $100.7760
395+ $0.3819 $150.8505
565+ $0.3552 $200.6880
735+ $0.3418 $251.2230
915+ $0.3285 $300.5775
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Availability: 25,000 pieces
MOQ: 120 pcs
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