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IRFZ14S

Part No IRFZ14S
Manufacturer Vishay
Catalog FETs - Single
Description Advanced Process Technology / Surface Mount (IRFZ14S) | MOSFET N-CH 60V 10A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 300pF at 25V
Power Dissipation (Maximum) 3.7W, 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188160-IRFZ14S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ14S CAD Model

Description

This electronic component is an N-Channel MOSFET from Vishay Siliconix.

  • Win Source Part Number: 1188160-IRFZ14S
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Category: discrete semiconductor product
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)
  • Operating Temperature Range: -55°C to 175°C
  • Power Dissipation (maximum): 3.7W, 43W
  • Vds - Drain-Source Breakdown Voltage: 60V
  • Id - Continuous Drain Current: 10A
  • Rds On (Maximum) @ Id, Vgs: 200mOhm @ 6A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 300pF @ 25V

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