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IRFZ40PBF

Name: IRFZ40PBF
Brand: Vishay
SKU: 161101
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRFZ40PBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 60V 50A TO220AB
Datasheet	IRFZ40PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	60V
Continuous Drain Current at 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	67nC @ 10V
Max Input Capacitance	1900pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	150W (Tc)
Maximum Rds On at Id,Vgs	28 mOhm @ 31A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	017732-IRFZ40PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFZ40PBF CAD Model

Description

The Vishay IRFZ40PBF is an N-channel MOSFET component that has a power dissipation of 150W (Tc) and a drain-source breakdown voltage of 60V.

Continuous Drain Current: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 67nC @ 10V
Maximum Input Capacitance: 1900pF @ 25V
Maximum Rds on @ Id,Vgs: 28 mOhm @ 31A, 10V
Temperature Range: -55°C to 175°C (TJ)
Case/Package: TO-220AB
Designed for: use in discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.4899	$59.5960
95+	$1.2225	$116.1375
150+	$1.1843	$177.6450
205+	$1.1461	$234.9505
265+	$1.1079	$293.5935
350+	$0.9933	$347.6550

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 4,100 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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