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Same model may have multiple batches, images only for reference.
SI1058X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1058X-T1-GE3

Part No SI1058X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V SC89
Datasheet
SI1058X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.55V @ 250μA
Max Gate Charge 5.9nC @ 5V
Max Input Capacitance 380pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 91 mOhm @ 1.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 064375-SI1058X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1058X-T1-GE3 CAD Model

Description

The SI1058X-T1-GE3 is an N-channel MOSFET from Vishay.

  • Manufacturer: Vishay
  • Product Name: SI1058X-T1-GE3
  • Channel Type: N-channel
  • Mounting: surface-mount device
  • Maximum Power Dissipation: 236mW @ Ta
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)
  • Supply and Demand Status: balanced
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Gate-Source Voltage: ±12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6343 $60.2585
225+ $0.5206 $117.1350
345+ $0.5043 $173.9835
475+ $0.4880 $231.8000
615+ $0.4717 $290.0955
820+ $0.4230 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,021 pieces
MOQ: 95 pcs
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