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IPC90N04S53R6ATMA1

Part No IPC90N04S53R6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A 8TDSON-34  /  N-Channel 40 V 90A (Tc) 63W (Tc) Surface Mount PG-TDSON-8-34
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 3.4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 32.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
Base Product Number IPC90N04
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPC90N04S53R6ATMA1-ND,IPC90N04S53R6ATMA1TR,IPC90N04S53R6ATMA1CT,IPC90N04S53R6ATMA1DKR,SP001418114
Standard Package 5,000
Win Source Part Number 1007529-IPC90N04S53R6ATMA1
Ultra Librarian 3D Model Ultra Librarian IPC90N04S53R6ATMA1 CAD Model

Description

The Infineon Technologies 1007529-IPC90N04S53R6ATMA1 is a MOSFET transistor designed for discrete semiconductor products.

  • FET Type: N-Channel
  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Maximum Rds On: 3.6mOhm @ 45A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: 8-PowerTDFN
  • Gate Charge: 32.6 nC @ 10 V
  • Input Capacitance: 1950 pF @ 25 V
  • Drive Voltage (max Rds On): 7V
  • Drive Voltage (min Rds On): 10V

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