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SPI100N03S2L-03

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Part No	SPI100N03S2L-03
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SPI100N03S2L-03 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8180 pF @ 25 V
Power Dissipation (Max)	300W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	SPI100N
Other Names	Q1620887
Standard Package	1
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1278293-SPI100N03S2L-03
Ultra Librarian 3D Model	Ultra Librarian SPI100N03S2L-03 CAD Model

Alternative Products

Description

The SPI100N03S2L-03 is an N-channel MOSFET transistor from Infineon Technologies.

Series: OptiMOS™
Drain to Source Voltage: 30 V
Continuous Drain Current @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Power Dissipation (Max): 300W (Tc)
Temperature Range: -55°C to 175°C (TJ)
Status: Obsolete
ECCN: EAR99

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