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Same model may have multiple batches, images only for reference.
SI1065X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1065X-T1-E3

Part No SI1065X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 1.18A SOT563F
Datasheet
SI1065X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 10.8nC @ 5V
Max Input Capacitance 480pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 156 mOhm @ 1.18A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 120834-SI1065X-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1065X-T1-E3 CAD Model

Description

The Vishay SI1065X-T1-E3 is a P-channel MOSFET that is designed for use in a variety of discrete semiconductor products.

  • Manufacturer: Vishay
  • Product Name: SI1065X-T1-E3
  • Channel Type: P-channel
  • Application: discrete semiconductor products
  • Maximum Power Dissipation: 236mW (Ta)
  • Application: power management
  • Drive Voltage: 1.8V (max Rds On) and 4.5V (min Rds On)
  • Maximum Drain-Source Breakdown Voltage: 12V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
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36+ $3.2144 $115.7184
56+ $3.1139 $174.3784
77+ $3.0134 $232.0318
100+ $2.9129 $291.2900
133+ $2.6115 $347.3295
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