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Same model may have multiple batches, images only for reference.
SI1065X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1065X-T1-GE3

Part No SI1065X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 1.18A SC89-6
Datasheet
SI1065X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 10.8nC @ 5V
Max Input Capacitance 480pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 156 mOhm @ 1.18A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 1095673-SI1065X-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1065X-T1-GE3 CAD Model

Description

The Vishay SI1065X-T1-GE3 is a P-channel MOSFET that comes in a SOT-563 or SOT-666 package.

  • Breakdown Voltage: 12V
  • Maximum Input Capacitance: 480pF @ 6V
  • Maximum Rds On @ Id,Vgs: 156 mOhm @ 1.18A, 4.5V
  • Operating Temperature Range: -55°C to 150°C
  • Suitable for use in: Discrete Semiconductor Products
  • Supply and Demand Status: Limited

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