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Same model may have multiple batches, images only for reference.
SI1410EDH-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI1410EDH-T1-E3

Part No SI1410EDH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.9A SC70-6
Datasheet
SI1410EDH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 8nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 3.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 106161-SI1410EDH-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1410EDH-T1-E3 CAD Model

Description

The Vishay MOSFET is a high-performance N-Channel transistor that is suitable for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.9A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 8nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 3.7A, 4.5V
  • Package: SC-70-6 (SOT-363)
  • Mounting: surface mount

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430+ $0.2711 $116.5730
660+ $0.2626 $173.3160
910+ $0.2541 $231.2310
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1,575+ $0.2203 $346.9725
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