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SI2308BDS-T1-GE3

Part No SI2308BDS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.3A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.8nC @ 10V
Max Input Capacitance 190pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Maximum Rds On at Id,Vgs 156 mOhm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028374-SI2308BDS-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial
Family Name Si2308BDS
Introduction Date March 13, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SI2308BDS-T1-GE3 CAD Model

Description

The Vishay SI2308BDS-T1-GE3 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 2.3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 6.8nC @ 10V
  • Maximum Input Capacitance: 190pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Application: Industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2346 $50.4390
520+ $0.1925 $100.1000
805+ $0.1865 $150.1325
1,110+ $0.1805 $200.3550
1,435+ $0.1745 $250.4075
1,920+ $0.1564 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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