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Same model may have multiple batches, images only for reference.
SI2314EDS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2314EDS-T1-E3

Part No SI2314EDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 3.77A SOT23-3
Datasheet
SI2314EDS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.77A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 14nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 33 mOhm @ 5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028380-SI2314EDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si2314EDS
Introduction Date September 06, 2001
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI2314EDS-T1-E3 CAD Model

Description

The Vishay MOSFET is a discrete semiconductor product that is ideal for various applications.

  • Type: N-Channel
  • Power Dissipation: 750mW (Ta)
  • Drive Voltage: 1.8V, 4.5V (Max Rds On, Min Rds On)
  • Continuous Drain Current @ 25°C: 3.77A (Ta)
  • Package/Case: SOT-23-3 (TO-236)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Maximum Rds On @ Id, Vgs: 33 mOhm @ 5A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0947 $57.7670
1,495+ $0.0774 $115.7130
2,310+ $0.0751 $173.4810
3,175+ $0.0728 $231.1400
4,100+ $0.0705 $289.0500
5,455+ $0.0635 $346.3925
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Availability: 3,400 pieces
MOQ: 610 pcs
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