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SI2328DS-T1-GE3

Part No SI2328DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.15A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 5nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 730mW (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 064396-SI2328DS-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2328DS-T1-GE3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has a Win Source Part Number of 064396-SI2328DS-T1-GE3.

  • Package: Reel-TR
  • Mounting Technology: SMD (SMT)
  • Polarity: N-Channel
  • Power Dissipation: 730mW (Ta)
  • Supply and Demand Status: Limited
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SOT-23-3 (TO-236)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 1.15A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 5nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 250 mOhm @ 1.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2793 $50.2740
385+ $0.2616 $100.7160
595+ $0.2528 $150.4160
855+ $0.2351 $201.0105
1,105+ $0.2263 $250.0615
1,380+ $0.2174 $300.0120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,460 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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