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SI2333DS-T1-E3

Part No SI2333DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1100pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 5.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028390-SI2333DS-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI2333DS-T1-E3 CAD Model

Description

The Vishay 028390-SI2333DS-T1-E3 is a P-channel MOSFET that is used in power management.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 4.1A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 18nC @ 4.5V
  • Maximum Input Capacitance: 1100pF @ 6V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V
  • Mounting: Surface mount device (SMD)
  • Case/Package: SOT-23-3 (TO-236)
  • Power Dissipation: 750mW (Ta)
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Reel
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3493 $50.6485
350+ $0.2866 $100.3100
545+ $0.2777 $151.3465
745+ $0.2687 $200.1815
965+ $0.2598 $250.7070
1,290+ $0.2329 $300.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,430 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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