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SI2392ADS-T1-GE3

Part No SI2392ADS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.4nC @ 10V
Max Input Capacitance 196pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 126 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095761-SI2392ADS-T1-GE3
Family Name Si2392ADS
ECCN EAR99
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI2392ADS-T1-GE3 CAD Model

Description

The Vishay Si2392ADS-T1-GE3 is an N-Channel MOSFET. Si2392ADS-T1-GE3 is designed by Vishay.

  • Designed for: use in discrete semiconductor products
  • Power Dissipation: 1.25W (Ta), 2.5W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 3.1A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 10.4nC @ 10V
  • Maximum Input Capacitance: 196pF @ 50V
  • Maximum Rds On @ Id,Vgs: 126 mOhm @ 2A, 10V
  • Mounting: SMD (SMT)
  • Package: SOT-23-3 (TO-236)
  • Temperature Range: -55°C to 150°C (TJ)
  • Suitable for: automotive and industrial electronics

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6595 $52.7600
185+ $0.5412 $100.1220
290+ $0.5243 $152.0470
395+ $0.5074 $200.4230
510+ $0.4904 $250.1040
685+ $0.4397 $301.1945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,995 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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