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PSMN1R7-25YLC,115

Part No PSMN1R7-25YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK56 / N-Channel 25 V 100A (Tc) 164W (Tc) Surface Mount LFPAK56, Power-SO8
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer NXP USA Inc.
Packaging Reel - TR
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3735 pF @ 12 V
Power Dissipation (Max) 164W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Case / Package SC-100, SOT-669
Base Product Number PSMN1
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 954-PSMN1R7-25YLC115,568-6723-6,2156-PSMN1R7-25YLC,115-ND,934065198115,2156-PSMN1R7-25YLC115-NXTR-ND,568-6723-1,NEXNXPPSMN1R7-25YLC,115,568-6723-2,PSMN1R725YLC115,2156-PSMN1R7-25YLC115
Standard Package 1,500
Win Source Part Number 1324634-PSMN1R7-25YLC,115
Ultra Librarian 3D Model Ultra Librarian PSMN1R7-25YLC,115 CAD Model

Description

Product Overview: PSMN1R7-25YLC,115

The PSMN1R7-25YLC,115 is a high-performance, N-channel MOSFET brought to you by NXP Semiconductors, a leader in the field of advanced electronic components. This MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including power management, switching circuits, and high-speed converters. With its low on-resistance and high switching speed, the PSMN1R7-25YLC,115 is an excellent choice for designers looking to optimize power consumption and enhance performance in their electronic designs.

Key Features

  • Low On-Resistance: Featuring an extremely low on-resistance of 1.7 mΩ, this MOSFET minimizes conduction losses and improves overall efficiency, making it an ideal choice for power-intensive applications.
  • High Continuous Drain Current: It supports a high continuous drain current of up to 100 A, allowing it to handle significant power levels and making it suitable for demanding environments.
  • High-Speed Switching: Designed for fast switching applications, the PSMN1R7-25YLC,115 ensures rapid response times and reduced switching losses.
  • Low Gate Charge: With a low gate charge, the device requires less energy to turn on and off, contributing to the overall efficiency of the system.
  • Robust Thermal Performance: The MOSFET comes in a compact LFPAK56 package that boasts excellent thermal performance, ensuring reliability even under high temperature operating conditions.

Applications

The versatility of the PSMN1R7-25YLC,115 allows it to be used in a variety of applications, such as:

  • DC/DC converters
  • Motor drives
  • Power supplies
  • Battery management systems
  • Automotive applications
  • Switch mode power supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN1R7-25YLC,115 MOSFET is no exception, as it is manufactured with state-of-the-art technology and subjected to rigorous testing to ensure it meets the requirements of even the most challenging applications.

Environmental Compliance

In addition to its technical capabilities, the PSMN1R7-25YLC,115 is also environmentally friendly. It is compliant with RoHS regulations, meaning it is free from hazardous substances and suitable for use in green electronics.

Whether you are designing a new power system or looking to improve an existing one, the PSMN1R7-25YLC,115 by NXP Semiconductors provides the performance, efficiency, and reliability you need to succeed.

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