The Vishay SI3481DV-T1-GE3 is a P-Channel MOSFET manufactured by Vishay, which is widely used in Discrete Semiconductor Products.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 4A (Ta)
• Mounting: SMD (SMT)
• Power Dissipation: 1.14W (Ta)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Rds On @ Id,Vgs: 48 mOhm @ 5.3A, 10V
• Case/Package: 6-TSOP (SOT-23-6 Thin, TSOT-23-6)
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 25nC @ 10V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Supply and Demand: Sufficient