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Same model may have multiple batches, images only for reference.
SI3867DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3867DV-T1-E3

Part No SI3867DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.9A 6-TSOP
Datasheet
SI3867DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 51 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 128955-SI3867DV-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3867DV-T1-E3 CAD Model

Description

The Vishay electronic component is a MOSFET technology with a P-Channel polarity.

  • Maximum Power Dissipation: 1.1W (Ta)
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Limited
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7725 $57.9375
185+ $0.6339 $117.2715
285+ $0.6142 $175.0470
390+ $0.5943 $231.7770
505+ $0.5745 $290.1225
675+ $0.5151 $347.6925
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Availability: 31,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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