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SI4128DY-T1-E3

Part No SI4128DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 435pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064468-SI4128DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4128DY-T1-E3 CAD Model

Description

This electronic component is an N-channel MOSFET type manufactured by Vishay.

  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Maximum Power Dissipation: 2.4W (Ta), 5W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10.9A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 435pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V
  • Popularity: Medium
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1536 $50.6880
795+ $0.1261 $100.2495
1,230+ $0.1221 $150.1830
1,695+ $0.1182 $200.3490
2,190+ $0.1143 $250.3170
2,930+ $0.1024 $300.0320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 157,284 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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