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SI4364DY-T1-E3

Part No SI4364DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 13 A
Drain to Source Resistance 4.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 16 ns
Gate to Source Voltage (Vgs) 16 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.6 W
Min Operating Temperature -55 °C
Number of Pins 8
Rise Time 16 ns
RoHS Compliant
Turn-Off Delay Time 165 ns
Win Source Part Number 1092844-SI4364DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4364DY-T1-E3 CAD Model

Description

The SI4364DY-T1-E3 is a P-channel MOSFET that has a drain to source voltage (Vdss) of 30V and a continuous drain current (ID) of 13A from Vishay.

  • Packaging: SOIC
  • Mounting: SMD (SMT) technology
  • Rise Time: 16 ns
  • Fall Time: 16 ns
  • Gate to Source Voltage (Vgs): 16V
  • Turn-Off Delay Time: 165 ns
  • Drain to Source Resistance: 4.5 mΩ
  • Application: transistors - FETs, MOSFETs - RF
  • Popularity: low popularity
  • Supply and Demand: shortage
  • RoHS Compliant: yes
  • ECCN: EAR99

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