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SI4403BDY-T1-GE3

Part No SI4403BDY-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 20V 7.3A 8SOIC / P-Channel 1.8-V (G-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 7.3A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 17mOhm at 9.9A, 4.5V
Vgs(th) (Maximum) at Id 1V at 350μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 5V
Maximum Vgs ±8V
Power Dissipation (Maximum) 1.35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811467-SI4403BDY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4403BDY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4403BDY-T1-GE3 is a P-Channel MOSFET from Vishay Siliconix.

  • Transistor Type: MOSFET P-Channel
  • Package: 8-SO
  • Drain-Source Voltage: 20V
  • Maximum Power Dissipation: 1.35W
  • Operating Temperature: -55°C to 150°C
  • Product Status: Obsolete (EOL)
  • ECCN: EAR99
  • Manufacturer Pack Quantity: 2,500
  • Gate Charge (Qg): 50nC @ 5V
  • Current-Continuous Drain (Id): 7.3A @ 25°C
  • Rds On (Maximum): 17mOhm @ 9.9A, 4.5V

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