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Same model may have multiple batches, images only for reference.
SI4462DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4462DY-T1-GE3

Part No SI4462DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.15A 8SO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4462
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 846026-SI4462DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4462DY-T1-GE3 CAD Model

Description

The SI4462DY-T1-GE3 is an N-channel MOSFET designed for high-performance switching applications by Vishay.

  • Channel Type: N-Channel
  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current: 1.15A @ 25°C
  • On-Resistance: 480mOhm @ 1.5A and 10V
  • Series: TrenchFET®
  • Mounting Type: Surface Mountable
  • Package: 8-SOIC
  • Width: 0.154" (3.90mm)
  • Gate Charge: 9nC @ 10V
  • Maximum Gate-Source Voltage: ±20V

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