The Vishay SI4472DY-T1-GE3 MOSFET is a N-Channel power MOSFET that can handle a maximum power dissipation of 3.1W (Ta), 5.9W (Tc). Bold the product name (e.g., BAV99S,135 → SI4472DY-T1-GE3) and manufacturer (e.g., Nexperia USA Inc. → Vishay).

• Power Dissipation: 3.1W (Ta), 5.9W (Tc) (Max)
• Drain-Source Breakdown Voltage: 150V
• Continuous Drain Current: 7.7A (Tc)
• Gate-Source Threshold Voltage: 4.5V @ 250μA
• Gate Charge: 43nC @ 10V (Max)
• Rds On @ Id,Vgs: 45 mOhm @ 5A, 10V (Max)
• Package: 8-SOIC (0.154", 3.90mm Width)
• Operating Temperature: -55°C to 150°C (TJ)