The Vishay 115222-SI4620DY-T1-E3 is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 6A @ 25°C.

• Drain-source breakdown voltage: 30V
• Maximum continuous drain current: 6A @ 25°C
• Gate-source threshold voltage: 2.5V @ 250μA
• Maximum gate charge: 13nC @ 10V
• Use: Discrete semiconductor products
• Power dissipation: 2W (Ta), 3.1W (Tc)
• Case/package: 8-SOIC (0.154", 3.90mm Width)
• Mounting technology: SMD (SMT)
• Drive voltage for maximum Rds On: 4.5V
• Minimum Rds On: 10V
• Supply and demand status: Balanced