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SI4808DY-T1-E3

Part No SI4808DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.7A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.7A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 110732-SI4808DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4808DY-T1-E3 CAD Model

Description

The Vishay 110732-SI4808DY-T1-E3 is an active electronic component that falls under the category of discrete semiconductor products.

  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Type: Dual N-channel FET with a logic level gate feature
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2854 $58.5070
495+ $0.2342 $115.9290
765+ $0.2270 $173.6550
1,055+ $0.2196 $231.6780
1,365+ $0.2123 $289.7895
1,825+ $0.1903 $347.2975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,200 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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