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Same model may have multiple batches, images only for reference.
SI4834BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4834BDY-T1-GE3

Part No SI4834BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.7A 8-SOIC
Datasheet
SI4834BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.7A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096016-SI4834BDY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4834BDY-T1-GE3 CAD Model

Description

The Vishay 1096016-SI4834BDY-T1-GE3 is a 2 N-Channel (Dual) FET with a Logic Level Gate feature.

  • Category: Discrete Semiconductor Products
  • Package: 8-SO
  • Mounting Type: Surface mount device (SMD) (SMT)
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.7A
  • Gate-Source Threshold Voltage @ 250μA: 3V
  • Max Gate Charge @ 4.5V: 11nC
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7.5A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9374 $60.9310
155+ $0.7692 $119.2260
235+ $0.7452 $175.1220
325+ $0.7212 $234.3900
415+ $0.6971 $289.2965
555+ $0.6250 $346.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,400 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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