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Same model may have multiple batches, images only for reference.
SI4838DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4838DY-T1-E3

Part No SI4838DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 17A 8-SOIC
Datasheet
SI4838DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 60nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028535-SI4838DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4838DY-T1-E3 CAD Model

Description

The Vishay 028535-SI4838DY-T1-E3 is an N-channel MOSFET used in various applications.

  • Type: Discrete semiconductor product
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation: 1.6W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Rds On: 3 mOhm @ 25A, 4.5V
  • Drain-Source Breakdown Voltage: 12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7661 $52.5559
45+ $2.2697 $102.1365
69+ $2.1987 $151.7103
94+ $2.1278 $200.0132
122+ $2.0569 $250.9418
163+ $1.8441 $300.5883
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