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SI4850EY-T1-GE3

Part No SI4850EY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R / MOSFET N-CH 60V 6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 083896-SI4850EY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Family Name Si4850EY
Introduction Date February 25, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI4850EY-T1-GE3 CAD Model

Description

The SI4850EY-T1-GE3 is a MOSFET electronic component manufactured by Vishay.

  • Product Family: Si4850EY
  • Category: discrete semiconductor products
  • Applications: suitable for industrial and power management applications
  • Power Dissipation: high power dissipation of 1.7W (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 6A (Ta)
  • Maximum Rds on @ Id, Vgs: 22 mOhm @ 6A, 10V
  • Compliance: compliant with halogen-free standards

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8594 $51.5640
125+ $0.8050 $100.6250
195+ $0.7778 $151.6710
280+ $0.7234 $202.5520
360+ $0.6962 $250.6320
450+ $0.6690 $301.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,773 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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