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SI4860DY-T1-E3

Part No SI4860DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 18nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 107695-SI4860DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4860DY-T1-E3 CAD Model

Description

The Vishay 107695-SI4860DY-T1-E3 is a MOSFET transistor with a maximum power dissipation of 1.6W and a continuous drain current of 11A @ 25°C.

  • Maximum Power Dissipation: 1.6W
  • Continuous Drain Current @ 25°C: 11A
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 8 mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Category: discrete semiconductor products
  • Supply and Demand Status: balance
  • Popularity: medium
  • Risk: high risk of fake products in the open market
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,595 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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