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Same model may have multiple batches, images only for reference.
FQP2P40_F080 Real Image
Same model may have multiple batches, images only for reference.

FQP2P40_F080

Part No FQP2P40_F080
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 400V 2A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 6.5 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1039842-FQP2P40_F080
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQP2P40_F080 CAD Model

Description

The Fairchild/ON Semiconductor FQP2P40_F080 is a P-Channel MOSFET with a maximum power dissipation of 63W (Tc).

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current @ 25°C: 2A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Rds On: 6.5 Ohm @ 1A, 10V
  • Case/Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Product
  • Mounting: Through a hole
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
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16+ $7.3805 $118.0880
25+ $7.1495 $178.7375
34+ $6.9185 $235.2290
44+ $6.6886 $294.2984
58+ $5.9968 $347.8144
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Availability: 32,600 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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