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Same model may have multiple batches, images only for reference.
SI4908DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4908DY-T1-E3

Part No SI4908DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 5A 8-SOIC / Trans MOSFET N-CH 40V 5A 8-Pin SOIC N T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Maximum) @ Id, Vgs 60 mOhm @ 4.1A, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 355pF @ 20V
Power - Max 2.75W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 794279-SI4908DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4908DY
Introduction Date March 07, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4908DY-T1-E3 CAD Model

Description

The Vishay Siliconix SI4908DY-T1-E3 is a dual N-channel TrenchFET with a standard FET feature.

  • Package: 8-SOIC
  • Mounting: Surface-mounting
  • Continuous Drain Current: 5A
  • Power: 2.75W
  • Drain-Source Voltage: 40V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Gate Charge Maximum: 12nC @ 10V
  • Input Capacitance Maximum: 355pF @ 20Vds
  • Rds On maximum: 60 mOhm @ 4.1A and 10Vgs
  • Status: Obsolete (EOL)
  • Applications: Discrete semiconductor products

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