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Same model may have multiple batches, images only for reference.
SIHU3N50DA-GE3
Same model may have multiple batches, images only for reference.

SIHU3N50DA-GE3

Part No SIHU3N50DA-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHU3N50DA-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 177 pF @ 100 V
Power Dissipation (Max) 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number SIHU3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277893-SIHU3N50DA-GE3
Ultra Librarian 3D Model Ultra Librarian SIHU3N50DA-GE3 CAD Model

Description

The SIHU3N50DA-GE3 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum Power Dissipation: 69W
  • Package: Tube
  • Gate Charge: 12nC @ 10V
  • Input Capacitance: 177pF @ 100Vds
  • Maximum Vgs: ±30V
  • Temperature Range: -55°C to 150°C
  • RoHS Compliant: Yes
  • ECCN: EAR99

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90+ $1.3015 $117.1350
140+ $1.2608 $176.5120
190+ $1.2201 $231.8190
245+ $1.1794 $288.9530
330+ $1.0574 $348.9420
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