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SI5475DC-T1-GE3

Name: SI5475DC-T1-GE3
Brand: Vishay
SKU: 1277503
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI5475DC-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SI5475DC-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Vgs (Max)	±8V
Power Dissipation (Max)	1.3W (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	1206-8 ChipFET™
Package / Case	8-SMD, Flat Lead
Base Product Number	SI5475
Standard Package	3,000
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277503-SI5475DC-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SI5475DC-T1-GE3 CAD Model

Alternative Products

Description

The SI5475DC-T1-GE3 is a MOSFET transistor that belongs to the TrenchFET series of electronic components.

FET Type: P-channel
Package: Tape and Reel
Standard Package: 3,000
Mounting Technology: SMD (SMT)
Drain to Source Voltage: 12V
Continuous Drain Current: 5.5A @ 25°C
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Power Dissipation: 1.3W (Ta)
Package/Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Temperature Range for Operation: -55°C ~ 150°C (TJ)
REACH: Unaffected
HTSUS: 8541.29.0095
Manufacturer: Vishay Siliconix

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