The SI5476DU-T1-GE3 is a N-Channel MOSFET transistor from Vishay's TrenchFET series.

• GPTDescription: It is designed for use in discrete semiconductor products, specifically in applications requiring high drain to source voltage (Vdss) of 60V and continuous drain current (Id) of 12A @ 25°C.
• GPTDescription: With a low on-resistance (Rds On) of 34mOhm @ 4.6A and 10V, this MOSFET offers efficient power dissipation of up to 3.1W.
• GPTDescription: The SI5476DU-T1-GE3 is surface mountable and comes in a PowerPAK ChipFET Single package.
• GPTDescription: It has a gate charge (Qg) of 32nC @ 10V and an input capacitance (Ciss) of 1100pF @ 30V.
• GPTDescription: Operating within a wide temperature range of -55°C to 150°C, this MOSFET is suitable for various electronic applications.
• GPTDescription: It is an active product from Vishay and is commonly used in power management circuits and other industrial applications.