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Same model may have multiple batches, images only for reference.
SI6443DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6443DQ-T1-GE3

Part No SI6443DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.3A 8-TSSOP
Datasheet
SI6443DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 8.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 123657-SI6443DQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6443DQ-T1-GE3 CAD Model

Description

The Vishay 123657-SI6443DQ-T1-GE3 is a P-Channel MOSFET with a maximum power dissipation of 1.05W (Ta).

  • Maximum Power Dissipation: 1.05W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 7.3A (Ta)
  • Gate-Source Threshold Voltage @ 250μA: 3V
  • Maximum Gate Charge @ 5V: 60nC
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 8.8A, 10V
  • Application: Discrete Semiconductor Products
  • Status: Obsolete
  • Popularity: Medium
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-TSSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3390 $60.2550
110+ $1.0988 $120.8680
165+ $1.0644 $175.6260
225+ $1.0300 $231.7500
290+ $0.9958 $288.7820
390+ $0.8927 $348.1530
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Availability: 1,600 pieces
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