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IPP100N08S207AKSA1

Part No IPP100N08S207AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO220-3  /  N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
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Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPP100N08S2-07,IPP100N08S2-07-ND,2156-IPP100N08S207AKSA1,INFINFIPP100N08S207AKSA1,SP000219005
Standard Package 500
Win Source Part Number 1028130-IPP100N08S207AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP100N08S207AKSA1 CAD Model

Description

The IPP100N08S207AKSA1 is a single N-channel MOSFET transistor designed for discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Product Name: IPP100N08S207AKSA1
  • Type: MOSFET transistor
  • Channel Type: N-channel
  • Series: OptiMOS™
  • Package: TO-220-3
  • Standard Package: 500
  • Power Dissipation (Max): 300W (Tc)
  • Gate Charge (Max) @ Vgs: 200 nC @ 10 V
  • ECCN: EAR99

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