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Same model may have multiple batches, images only for reference.
SI7100DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7100DN-T1-GE3

Part No SI7100DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 35A PPAK 1212-8
Datasheet
SI7100DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 105nC @ 8V
Max Input Capacitance 3810pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096127-SI7100DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7100DN-T1-GE3 CAD Model

Description

The Vishay SI7100DN-T1-GE3 is an N-channel MOSFET with a power dissipation rating of 3.8W (Ta) and 52W (Tc).

  • Power Dissipation: 3.8W (Ta), 52W (Tc)
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 35A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 105nC @ 8V
  • Maximum Rds On: 3.5 mOhm @ 15A, 4.5V
  • Package: PowerPAK 1212-8
  • Operating Temperature Range: -50°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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