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Same model may have multiple batches, images only for reference.
SI7326DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7326DN-T1-GE3

Part No SI7326DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A PPAK 1212-8
Datasheet
SI7326DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 13nC @ 5V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064555-SI7326DN-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7326DN-T1-GE3 CAD Model

Description

The Vishay 064555-SI7326DN-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 6.5A at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.5A @ 25°C
  • Maximum Rds On: 19.5 mOhm @ 10A and 10V gate-source voltage
  • Maximum Gate-Source Voltage: ±25V
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Maximum Gate Charge: 13nC @ 5V
  • Maximum Input Capacitance: not specified
  • Package: PowerPAK 1212-8
  • Power Dissipation: 1.5W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2876 $50.3300
375+ $0.2694 $101.0250
580+ $0.2603 $150.9740
830+ $0.2421 $200.9430
1,075+ $0.2330 $250.4750
1,340+ $0.2239 $300.0260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 175 pcs
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