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Same model may have multiple batches, images only for reference.
SI7392DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7392DP-T1-GE3

Part No SI7392DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A PPAK SO-8
Datasheet
SI7392DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Features N-Channel 30 V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer Vishay
Series TrenchFET®
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package PowerPAK® SO-8
Case / Package PowerPAK® SO-8
Family Name SI7392
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 894763-SI7392DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7392DP-T1-GE3 CAD Model

Description

The Vishay SI7392DP-T1-GE3 is a N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 9A.

  • Channel Type: N-channel
  • Voltage: 30V
  • Current: 9A
  • Applications: Power management
  • Package: PowerPAK SO-8
  • Mounting: Surface Mountable
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation: 1.8W (Ta)
  • Status: Obsolete
  • Packaging: Reel
  • Quantity: 3000 units
  • REACH: Unaffected

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