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Same model may have multiple batches, images only for reference.
SI7425DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7425DN-T1-E3

Part No SI7425DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8.3A PPAK 1212-8
Datasheet
SI7425DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 300μA
Max Gate Charge 39nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 12.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064565-SI7425DN-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7425DN-T1-E3 CAD Model

Description

The SI7425DN-T1-E3 is a P-channel MOSFET transistor manufactured by Vishay.

  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current at 25°C: 8.3A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 300μA
  • Maximum Gate Charge: 39nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 16 mOhm @ 12.6A, 4.5V
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4377 $59.0895
325+ $0.3592 $116.7400
500+ $0.3477 $173.8500
690+ $0.3361 $231.9090
890+ $0.3257 $289.8730
1,190+ $0.2922 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,150 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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