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Same model may have multiple batches, images only for reference.
SI7621DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI7621DN-T1-GE3

Part No SI7621DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A 1212-8 PPAK
Datasheet
SI7621DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.2nC @ 5V
Max Input Capacitance 300pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.1W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 3.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096186-SI7621DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7621DN-T1-GE3 CAD Model

Description

The Vishay SI7621DN-T1-GE3 is a P-channel MOSFET designed for discrete semiconductor products.

  • Mounting Type: SMD (SMT)
  • Package: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4A (Tc)
  • Maximum Rds On @ Id,Vgs: 90 mOhm @ 3.9A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 6.2nC @ 5V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1404 $62.7220
125+ $0.9357 $116.9625
195+ $0.9064 $176.7480
265+ $0.8773 $232.4845
345+ $0.8480 $292.5600
460+ $0.7602 $349.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,900 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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