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Same model may have multiple batches, images only for reference.
SI7913DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7913DN-T1-GE3

Part No SI7913DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 5A PPAK 1212-8
Datasheet
SI7913DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 37 mOhm @ 7.4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 24nC @ 4.5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 1096210-SI7913DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI7913DN-T1-GE3 CAD Model

Description

The Vishay SI7913DN-T1-GE3 is a dual 2 P-Channel FET (Field-Effect Transistor) with a logic level gate feature.

  • Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On: 37 mOhm @ 7.4A, 4.5V
  • Max Gate Charge: 24nC @ 4.5V
  • Applications: Industrial, power management, and portable devices
  • Package: PowerPAK 1212-8 Dual
  • Mounting: SMD (SMT)
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9656 $57.9360
150+ $0.7923 $118.8450
230+ $0.7676 $176.5480
315+ $0.7428 $233.9820
405+ $0.7181 $290.8305
540+ $0.6438 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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